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| R N N-CHANNEL MOSFET JCS12N60T MAIN CHARACTERISTICS Package ID VDSS Rdson @Vgs=10V Qg UPS 12 A 600 V 0.65 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 23pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Crss ( 23pF) dv/dt RoHS ORDER MESSAGE Order codes JCS12N60CT-O-C-N-B JCS12N60FT-O-F-N-B Halogen Free NO NO Device Weight 2.15 g(typ) 2.20 g(typ) Marking JCS12N60CT JCS12N60FT Package TO-220C TO-220MF Packaging Tube Tube 201010C 1/10 R JCS12N60T ABSOLUTE RATINGS (Tc=25) JCS12N60CT 600 12 7.6 48 30 880 12 25 4.5 250 51 JCS12N60FT 600 12* 7.6* 48* Unit V A A A V mJ A mJ V/ns W Value Parameter Drain-Source Voltage Drain Current Symbol VDSS ID T=25 T=100 IDM VGSS -continuous 1 Drain Current - pulse note 1 Gate-Source Voltage 2 EAS Single Pulsed Avalanche Energy note 2 1 Avalanche Currentnote 1 1 Repetitive Avalanche Currentnote 1 IAR EAR 3 dv/dt Peak Diode Recovery dv/dtnote 3 PD TC=25 -Derate above 25 TJTSTG Power Dissipation 2.0 0.41 W/ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes 55+150 TL 300 * *Drain current limited by maximum junction temperature 201010C 2/10 R JCS12N60T Tests conditions Min Typ Max Units ELECTRICAL CHARACTERISTICS Parameter Off -Characteristics Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VDS=25V, VGS =0V, f=1.0MHZ 1790 2410 175 23 229 31 pF pF PF VGS(th) VDS = VGS , ID=250A 3.0 5.0 V BVDSS ID=250A, VGS=0V 600 V Symbol BVDSS/ ID=250A, referenced to 25 TJ VDS=600V,VGS=0V, TC=25 VDS=480V, IGSSF VDS=0V, TC=125 - 0.5 - V/ IDSS - - 1 10 100 A A nA VGS =30V IGSSR VDS=0V, VGS =-30V - - -100 nA RDS(ON) VGS =10V , ID=6A - 0.56 0.65 gfs VDS = 40V, ID=6Anote 4 - 13 - S 201010C 3/10 R JCS12N60T td(on) tr td(off) tf Qg Qgs Qgd VDS =480V , ID=12A VGS =10V note 45 VDD=300V,ID=12A,RG=25 note 45 78 102 133 175 233 305 104 160 39 8.5 20 52 ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge Gate-Source charge Gate-Drain charge Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 12 A ISM - - 48 A VGS=0V, IS=12A - - 1.39 V trr Qrr VGS=0V, IS=12A (note 4) dIF/dt=100A/s - 418 4.85 - ns C THERMAL CHARACTERISTIC JCS12N60CT 0.5 62.5 Notes: 1Pulse width limited by maximum junction temperature 2L=11.2mH, IAS=12A, VDD=50V, RG=25 ,Starting TJ=25 3ISD 12A,di/dt 300A/s,VDDBVDSS, Starting TJ=25 4Pulse TestPulse Width 300s,Duty Cycle2 5Essentially independent of operating temperature Max JCS12N60FT 2.45 62.5 Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1 2 L=11.2mH, IAS=12A, VDD=50V, RG=25 , TJ=25 3ISD 12A,di/dt 300A/s,VDDBVDSS, TJ=25 4300s,2 5 Symbol Rth(j-c) Rth(j-A) Unit /W /W 201010C 4/10 R JCS12N60T ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics On-Region Characteristics VGS 15V 10V 8V 7V 6.5V 6V 5.5V Bottom 5V Top 10 ID [A] ID [A] 10 150 1 25 1 Notes: 1. 250s pulse test 2. TC=25 0.1 2 4 6 Notes: 1.250s pulse test 2.VDS=40V 8 10 1 10 VDS [V] VGS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 0.85 Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.80 VGS=10V 10 0.75 RDS(on) [ ] 0.70 IDR [A] 25 1 0.65 0.60 VGS=20V Note:Tj=25 0 2 4 6 8 10 12 14 16 18 20 0.1 0.1 0.2 0.3 150 0.55 Notes: 1. 250s pulse test 2. VGS=0V 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0.50 0.4 0.5 ID [A] V S D [V] Capacitance Characteristics 3x10 3 Gate Charge Characteristics 12 Capacitance [pF] Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd 2x10 3 10 VDS=480V VDS=300V VGS Gate Source Voltage[V] 8 VDS=120V 6 1x10 3 4 2 0 10 -1 0 V DS Drain-Source Voltage [V] 10 0 10 1 0 10 20 30 40 Qg Toltal Gate Charge [nC] 201010C 5/10 R JCS12N60T On-Resistance Variation vs. Temperature 3.0 2.5 ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation vs. Temperature 1.2 BVDS(Normalized) 1.1 RD(on)(Normalized) 2.0 1.0 1.5 1.0 0.9 Notes: 1. VGS=0V 2. ID=250A -50 -25 0 25 50 75 100 125 150 0.5 Notes: 1. VGS=10V 2. ID=6.0A -50 -25 0 25 50 75 100 125 150 0.8 -75 0.0 -75 Tj [] Tj [] Maximum Safe Operating Area For JCS12N60CT 10 2 Maximum Safe Operating Area For JCS12N60FT 10 2 Operation in This Area is Limited by RDS(ON) 10s 100s Operation in This Area is Limited by RDS(ON) 10s 100s 1ms 10ms ID Drain Current [A] 10 1 1ms 10ms 100ms ID Drain Current [A] 10 1 10 0 10 0 10 -1 Note: 1 TC=25 2 TJ=150 3 Single Pulse 0 DC 10 10 3 -1 Note: 1 TC=25 2 TJ=150 3 Single Pulse 0 100ms DC 10 3 10 VDS Drain-Source Voltage [V] 10 1 10 2 10 VDS Drain-Source Voltage [V] 10 1 10 2 Maximum Drain Current vs. Case Temperature 14 12 ID Drain Current [A] 10 8 6 4 2 0 25 50 75 100 125 150 TC Case Temperature [ ] 201010C 6/10 R JCS12N60T Transient Thermal Response Curve For JCS12N60CT ELECTRICAL CHARACTERISTICS (curves) (t) Thermal Response 1 D = 0 .5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 0 .0 1 N 1 2 3 o te s : Z J C(t)= 0 .5 /W M a x D u ty F a c to r , D = t1 /t2 T J M -T c = P D M * Z J C(t) JC P Z DM 0 .0 1 s in g le p u ls e t1 t2 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] Transient Thermal Response Curve For JCS12N60FT 1 D = 0 .5 (t) Thermal Response 0 .2 0 .1 0 .0 5 N 1 2 3 o te s : Z J C (t)= 2 .4 5 /W M a x D u ty F a c to r , D = t1 /t2 T J M -T c = P D M * Z J C(t) 0 .1 0 .0 2 0 .0 1 JC Z P DM s in g le p u ls e 0 .0 1 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 t1 t2 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] 201010C 7/10 R JCS12N60T Unitmm PACKAGE MECHANICAL DATA TO-220C 201010C 8/10 R JCS12N60T Unitmm PACKAGE MECHANICAL DATA TO-220MF 201010C 9/10 R JCS12N60T NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 1. 2. 3. 4. 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-4671533 CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax86-432-64665812 Web Sitewww.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-4671533 201010C 10/10 |
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